Invited speakers

Characterization and fundamental Physics

  • Raphael Butté, EPFL (CH): Deep traps in InGaN/GaN single quantum well structures
  • Yong-Hoon Cho, KAIST (KR): Room temperature polariton condensate and polaritonic non-Hermitian system based on GaN single microcavity 
  • Keshav Dani, Femtosecond Spectroscopy Unit of OIST (JP): tba
  • Daniel Feezell, Univ. of New Mexico (US): Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence
  • Mitsuru Funato, Kyoto Univ. (JP): Fabrication and optical properties of ultra-thin GaN/AlN quantum wells for far-UVC emitters 
  • Akira Sakai,Osaka University (JP): Current leakage mechanism at Schottky contacts locally formed on individual screw and mixed threading dislocations in GaN substrates
  • Mark Holmes, University of Tokyo (JP): Nanophotonic structures for III-nitride Quantum Dot Single-Photon Emitters
  • Gwénolé Jacopin, Institut Néel, CNRS, Grenoble (FR): Surface recombinations in III-nitride micro-LEDs: What photon correlation cathodoluminescence tells us 
  • Martin Kuball, Bristol Univ. (UK): Heat transport in power and RF devices, and GaN on Diamond 
  • Tomoaki  Nambu, Osaka Univ. (JP): Blue Second Harmonic Generation from GaN Monolithic Microcavity 
  • Rachel Oliver, Univerity of Cambridge (UK): Multi-microscopy of green-emitting quantum wells 
  • Michael Reshchikov, Virginia Commonwealth Univ. (US): On the origin of the yellow luminescence band in GaN
  • Yudai Yamaguchi, Sony Group Corporation (JP): Diffusion of Indium Along Threading Dislocations in InGaN Quantum Wells
  • Robert Martin, Strathclyde University (GB): Correlative light-electron microscopy – non-destructive imaging of residual strains and their effect on optical and electrical properties of III-Nitrides

Electronic Devices

  • Oliver Ambacher, Fraunhofer IAF (DE): What is special about ScAlN? An overview of its structural, mechanical and polarization-induced properties 
  • Matteo Borga, IMEC (BE): Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates
  • Edward Yi Chang, National Yang Ming Chiao Tung University (NYCU) Hsinchu, Taiwan (TW): Use of HfZrO ferroelectric thin film as gate stack material to achieve High Vth E-Mode GaN HEMT for power application 
  • Christian Huber, Bosch (DE): Process challenges and perspectives of vertical GaN power transistors on foreign substrates 
  • Debdeep Jena, Cornell Univ. (US): Thin channel FETs on AlN: nFETs and pFETs for nitride CMOS 
  • Dong Ji, School of Science and Engineering - The Chinese University of Hong Kong,Shenzhen (CN): Avalanche based GaN Devices
  • Asif Khan, University of South Carolina (US) : Static and Dynamic Thermal Behavior of AlGaN/GaN HEMTs on AlN Heat Spreaders Transferred to Copper Heat Sink by Laser Liftoff
  • Elison Matioli, EPFL (CH): Advanced device concepts for power electronics (Trenched power devices, Diamond Growth in GaN trenches, Vertical Transistors) 
  • Umesh Mishra, College of Engineering - UC Santa Barbara (US): N-Polar GaN Transistors for beyond 5G applications
  • Patrick Waltereit, Fraunhofer IAF(DE): GaN on-chip Integration: Technology & Applications
  • Testu Kachi, Institute of Materials and Systems for Sustainability - Nagoya University (JP): Selective-area p-type doping by ion implantation with ultra-high-pressure annealing and its device applications

Growth

  • Andrew Allermann, Sandia National Laboratory (US): Ultra-wide Bandgap AlGaN Alloys for Diodes and Transistors
  • Michal Bockowski, UNIPRESS (PL): What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN 
  • Ramon Collazo, North Carolina State University, Materials Science and Engineering (US): Practical N-type Doping in AlN for Power Electronics
  • Alan Doolittle, Georgia Insititute of Technology (US): Surface Chemistry and Adatom Kinetics for Hyper Doping and Phase Purity in Nitride Semiconductors
  • Amélie Dussaigne, CEA-LETI (FR): Efficient red emission from high In content InGaN alloy: towards native RGB micro-displays 
  • Sylvia Hagedorn, FBH (DE): Growth on high temperature annealed AlN/sapphire templates – challenges and opportunities
  • Carsten Hartmann, IKZ (DE): Efficient diameter enlargement of bulk AlN single crystals with high crystalline perfection  
  • Marc Hoffmann, ams OSRAM (DE): Challenges of epitaxial growth & industrialization of efficient UV-C LEDs  
  • Stefano Leone, Fraunhofer IAF (DE): Growth of AlScN/GaN heterostructures by metal-organic chemical vapor deposition: challenges and perspectives
  • Hideto Miyake, Mie University (JP): Fabrication of AlN templates with screw- and mixed-type dislocation densities of 10^3 cm^-2   
  • Tetsuo Narita, Toyota Central R&D Labs (JP): Diffusion of Mg and H atoms in Mg-doped and Mg ion-implanted GaN through annealing  
  • Kazuki Ohnishi, Nagoya Univ. (JP): HVPE growth for vertical GaN p-n junction diodes with high breakdown voltages 
  • Henryk Turski, Institute of High Pressure Physics PAS (PL):Competition between built-in polarization and p-n junction field in III-nitride heterostructures

Novel Materials and Nanostructures

  • Guillaume Cassabois, Univ. of Montpellier (FR): Efficient light-matter interaction in hexagonal boron nitride
  • Shigefusa Chichibu, Tohoku University (JP): Emission dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors
  • Benjamin Damilano (FR): Porous (Ga,In)N layers and LEDs made by selective area sublimation 
  • James H. Edgar, Kansas State University (US): Improving Hexagonal Boron Nitride Properties by Controlling Boron Isotope Concentrations
  • Kazuyuki Hirama, NTT Basic Research Laboratories (JP): MBE growth of cubic boron aluminum nitride (c-BAlN) epitaxial layers
  • Hideki Hirayama, RIKEN (JP): m-plane GaN terahertz quantum cascade lasers
  • Jeehwan Kim, MIT (US): Remote epitaxy for ultimate heterogeneous integration of compound semiconductors
  • Jong Kyu Kim, Postech (KR): Growth of suspended  and strained hexagonal boron nitrides on GaN substrate by MOCVD
  • Kazuhiro Ohkawa, KAUST (SA): MOVPE growth of high-In-content InGaN and their red micro-LEDs
  • Abdallah Ougazzaden, Georgia Tech Lorraine (FR): Van der Waals epitaxy of III-Nitrides on hexagonal boron nitride: from material properties to device applications 
  • Adrien Rousseau, Laboratoire Charles Coulomb (FR):First Observation Of Bernal Boron Nitride Single Crystals
  • Lars Samuelson, Lund Univ. (SE): Red microLEDs via growth of relaxed InGaN platelets and their applications in devices
  • Suresh Sundaram, Georgia Tech Lorraine (FR): Selective area growth of III-Nitrides on h-BN platform
  • Lai Wang, Beijing National Research Center for Information Science and Technology (CN): Growing III-Nitrides on 2D Materials for Flexible Applications 
  • Jianchang Yan, Institut of Semiconductors CAS (CN): Deep-ultraviolet light-emitting diodes with hexagonal BN

Optical Devices

  • Yasuhiko Arakawa, Univertity of Tokyo (JP): Advances in GaN quantum-dot single photon sources  
  • Aurélien David, Google Inc. (US): tba 
  • Werner Goetz, Bolb Inc. (US): High power UVC LEDs and their lifetime models 
  • Åsa Haglund, Chalmers (SW): Blue and UV VCSELs: today and tomorrow 
  • Motoaki Iwaya, Meijo Univ. (JP): Progress in AlGaN-based UV-B laser diodes fabricated on sapphire substrates 
  • Hirotsugu Kobayashi, Asahi Kasei (JP): High output power Far-UVC LEDs emitting below 230 nm on AlN substrates
  • Charles Li, Playnitride (TW): Development of MicroLED Display Technology and Applications
  • Martina Meinke, Charité (DE): Application of skin save 233 nm far-UVC LEDs for eradication of MRSA and MSSA 
  • Susumo Noda, Kyoto Univ. (JP): High-power 2D photonic crystal surface emitting InGaN/GaN lasers 
  • Torsten Passow; Fraunhofer-Institut für Angewandte Festkörperphysik IAF(DE): Development of AlGaN-based focal plane arrays for the solar-blind ultraviolet wavelength region
  • Jan Ruschel, FBH (DE): Degradation mechanisms in UV LEDs and how to achieve long lifetimes 
  • Czeslaw Skierbiszewski, UNIPRESS (PL): How tunnel junctions changed our perception of III-N optoelectronic devices 
  • Tetsuya Takeuchi, Meijo Univ. (JP): GaN-based tunnel junctions and laser diodes 
  • Kenichi Terao, Nichia Corp. (JP): High wall-plug efficiency blue and green nitride EELs and VCSELs
  • Thomas Wunderer, Palo Alto Research Center | PARC (US): Single-frequency III-Nitride Photonic Integrated Laser